EXCESS SURFACE CURRENTS IN P-N JUNCTIONS AND BIPOLAR TRANSISTORS

被引：7

作者：

ESTEVE, D

MARTINOT, H

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(71)90149-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：693 / &

共 17 条

[1]

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[3]

ESTEVE D, 1969, CR HEBD SEANC ACAD S, V267, P870

[4]

ESTEVE D, 1970, ONDE ELECT, V50, P206

[5]

ESTEVE D, 1969, THESIS TOULOUSE

GROVE, AS ;

FITZGERALD, DJ .

[7]

IWERSEN JE, 1962, IRE T ELECTRON DEV, VED9, P474

[8] THEORY OF 1/F NOISE IN BIPOLAR SILICON PLANAR TRANSISTORS [J].

MARTIN, JC ;

ESTEVE, D ;

BLASQUEZ, G ;

RIBEYROL, JM .

[9]

MARTINOT H, 1968, NOV COLL INT GREN CO

REDDI, VGK .