OXYGEN BUBBLES ALONG INDIVIDUAL ION TRACKS IN O+ IMPLANTED SILICON

[1] MIGRATION AND COALESCENCE OF INERT GAS BUBBLES IN METALS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1963, 275 (1360) : 47 - +

[2] DIFFUSION LIMITED PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 525 - 527

[3] BIRTCHER RC, 1987, MATER RES SOC S P, V74, P345

[4] BULLOUGH R, 1972, RAD INDUCED VOIDS ME, P769

[5] Davies J. A., 1984, Ion implantation and beam processing, P81

[6] THE THEORY OF GAS BUBBLE LATTICE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1986, 100 (1-2): : 85 - 104

[7] ELGHOR MK, 1987, MATER RES SOC S P, V74, P591

[8] ELGHOR MK, COMMUNICATION

[9] HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207

[10] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF BURIED OXIDE AND SURFACE CRYSTALLINITY DURING HIGH-DOSE OXYGEN IMPLANTATION INTO SI [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1081 - 1083

[1] MIGRATION AND COALESCENCE OF INERT GAS BUBBLES IN METALS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1963, 275 (1360) : 47 - +

[2] DIFFUSION LIMITED PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 525 - 527

[3] BIRTCHER RC, 1987, MATER RES SOC S P, V74, P345

[4] BULLOUGH R, 1972, RAD INDUCED VOIDS ME, P769

[5] Davies J. A., 1984, Ion implantation and beam processing, P81

[6] THE THEORY OF GAS BUBBLE LATTICE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1986, 100 (1-2): : 85 - 104

[7] ELGHOR MK, 1987, MATER RES SOC S P, V74, P591

[8] ELGHOR MK, COMMUNICATION

[9] HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207

[10] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF BURIED OXIDE AND SURFACE CRYSTALLINITY DURING HIGH-DOSE OXYGEN IMPLANTATION INTO SI [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1081 - 1083