NONUNIFORM PHOTO-LUMINESCENCE INTENSITY DISTRIBUTION ON SEMI-INSULATING GAAS AND EFFECTS OF CR AND DISLOCATIONS

被引：17

作者：

KITAHARA, K

OZEKI, M

SHIBATOMI, A

机构：

来源：

关键词：

D O I：

10.1063/1.93876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：188 / 190

页数：3

共 8 条

[1] PHOTO-LUMINESCENCE AT DISLOCATIONS IN GAAS AND INP [J].

BOHM, K ;

FISCHER, B .

[2]

CRONIN GR, 1964, J ELECTROCHEM SOC, V111, P875

IIZUKA, T .

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637

[5]

KITAHARA K, 1982, J ELECTROCHEM SOC, V129, P881

PANISH, MB .

TAJIMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04) :L227-L229

[8]

Williams E.W., 1992, SEMICONDUCTOR SEMIME, V8, P321