LUMINESCENCE OF ZINC DOPED SOLUTION GROWN GAAS - EFFECT OF ARSENIC PRESSURE

被引：18

作者：

PANISH, MB

机构：

[1] Bell telephone Laboratories, Murray Hill, NJ

来源：

关键词：

D O I：

10.1016/0022-3697(68)90086-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

[No abstract available]

引用

页码：409 / &

共 7 条

CASEY, HC ;

PANISH, MB ;

CHANG, LL .

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DOUSMANIS, GC ;

STAEBLER, DL ;

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[3]

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[4]

NELSON H, 1963, RCA REV, V24, P603

[5] SOLID SOLUBILITY LIMITS OF ZINC IN GAAS AT 1000 DEGREES [J].

PANISH, MB ;

CASEY, HC .

[6] PHOTOLUMINESCENCE AND SOLUTION GROWTH OF GALLIUM ARSENIDE [J].

PANISH, MB ;

QUEISSER, HJ ;

DERICK, L ;

SUMSKI, S .

[7] LUMINESCENCE OF ZINC DOPED SOLUTION GROWN GALLIUM ARSENIDE [J].

QUEISSER, HJ ;

PANISH, MB .