DEEP LEVELS DUE TO ISOLATED SINGLE AND PAIR VACANCIES IN C, SI AND GE

被引：13

作者：

TALWAR, DN ^{[1
]}

TING, CS ^{[1
]}

机构：

[1] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77004

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 32期

关键词：

D O I：

10.1088/0022-3719/15/32/017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：6573 / 6584

页数：12

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