BAND STRUCTURE AND OPTICAL PROPERTIES OF DIAMOND

[1] ANDERSON PW, 1963, CONCEPTS SOLIDS, P66

[2] BENNEMANN KH, 1964, PHYS REV, V133, P1045

[3] REFLECTIVITY AND BAND STRUCTURE OF GAAS GAP AND GA(AS P) ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 662 - +

[4] REFLECTANCE AND PHOTOEMISSION FROM SI [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (09) : 389 - &

[5] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[6] CRITICAL POINTS AND ULTRAVIOLET REFLECTIVITY OF SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (03) : 94 - &

[7] THE ABSORPTION EDGE SPECTRUM OF DIAMOND [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 481 - 485

[8] INTRINSIC EDGE ABSORPTION IN DIAMOND [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1964, 277 (1370) : 312 - +

[9] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[10] SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB [J]. PHYSICAL REVIEW, 1965, 139 (3A): : A912 - &

[1] ANDERSON PW, 1963, CONCEPTS SOLIDS, P66

[2] BENNEMANN KH, 1964, PHYS REV, V133, P1045

[3] REFLECTIVITY AND BAND STRUCTURE OF GAAS GAP AND GA(AS P) ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 662 - +

[4] REFLECTANCE AND PHOTOEMISSION FROM SI [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (09) : 389 - &

[5] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[6] CRITICAL POINTS AND ULTRAVIOLET REFLECTIVITY OF SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (03) : 94 - &

[7] THE ABSORPTION EDGE SPECTRUM OF DIAMOND [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 481 - 485

[8] INTRINSIC EDGE ABSORPTION IN DIAMOND [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1964, 277 (1370) : 312 - +

[9] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[10] SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB [J]. PHYSICAL REVIEW, 1965, 139 (3A): : A912 - &