ROLE OF COULOMB REPULSION IN 4F ORBITALS IN ELECTRICAL EXCITATION OF RARE-EARTH IMPURITIES IN SEMICONDUCTORS

被引：10

作者：

TIEDJE, T

COLBOW, KM

GAO, Y

DAHN, JR

REIMERS, JN

HOUGHTON, DC

机构：

[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA

[2] NATL RES COUNCIL CANADA,OTTAWA K1A 0R6,ONTARIO,CANADA

[3] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1Z1,BC,CANADA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 11期

关键词：

D O I：

10.1063/1.107570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of the on-site Coulomb repulsion energy in the electrical excitation of rare-earth ions by minority carrier injection in semiconductors is examined. Resonant photoemission measurements of the interfacial electronic energy level alignment in NdF3/Silicon heterojunctions show that the large Coulomb repulsion energy of the atomic-like 4f orbitals prevents the direct excitation of the 4f levels by either electron or hole capture.

引用

页码：1296 / 1297

页数：2

共 9 条

[1] INTERFACIAL BAND ALIGNMENTS FOR LAF3, NDF3, AND TMF3 HETEROJUNCTIONS ON SI(111) [J].