GE-AU INTERFACE FORMATION VS SI-AU INTERFACE FORMATION - ARE THEY DIFFERENT PROCESSES

被引：18

作者：

PERFETTI, P

KATNANI, AD

DANIELS, RR

ZHAO, TX

MARGARITONDO, G

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(82)91035-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：213 / 215

页数：3

共 9 条

[1] BISI O, UNPUB
[2] PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE
BRAICOVICH, L
GARNER, CM
SKEATH, PR
SU, CY
CHYE, PW
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5131 - 5141
[3] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
STOFFEL, NG
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841
[4] PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON RADIATION .2. ELECTRONIC-STRUCTURE OF GERMANIUM
GROBMAN, WD
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW B, 1975, 12 (10): : 4405 - 4433
[5] OPTICAL-PROPERTIES OF AMORPHOUS METALLIC ALLOYS
HAUSER, E
ZIRKE, RJ
TAUC, J
HAUSER, JJ
NAGEL, SR
[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (26) : 1733 - 1736
[6] ENERGY-LOSS SPECTROSCOPY (ELS) ON THE SI-AU SYSTEM
PERFETTI, P
NANNARONE, S
PATELLA, F
QUARESIMA, C
SAVOIA, A
CERRINA, F
CAPOZI, M
[J]. SOLID STATE COMMUNICATIONS, 1980, 35 (02) : 151 - 153
[7] PERFETTI P, UNPUB
[8] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES
SPICER, WE
LINDAU, I
SKEATH, P
SU, CY
CHYE, P
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (06) : 420 - 423
[9] TU KN, THIN FILMS INTERDIFF, P359