INFRARED STRIAGRAPH TOPOGRAPHY FOR IMAGING DEFECTS IN SEMICONDUCTOR CRYSTALS

被引：3

作者：

BARNS, RL

机构：

来源：

关键词：

D O I：

10.1007/BF02657522

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：703 / 710

页数：8

共 8 条

[1]

BARNS RL, 1962, P TECH C METALLURGY, P337

[2]

BROZEL MR, 1987, DEFECT RECOGNITION I, P225

FARGES, JP ;

SCHILLER, C ;

BARTELS, WJ .

[4] INFRARED REFLECTANCE STUDY OF N-TYPE INP GROWN BY THE LEC METHOD [J].

HUA, QH ;

LI, GP ;

HE, XK ;

WANG, Q ;

SUN, TN .

[5] INFRARED REFLECTANCE AND ABSORPTION OF N-TYPE INP [J].

KIM, OK ;

BONNER, WA .

[6] THE DYNAMIC GRADIENT FREEZE GROWTH OF INP [J].

MONBERG, EM ;

BROWN, H ;

BONNER, CE .

[7]

SUGAII K, 1983, J ELECTRON MATER, V12, P701

[8]

1987, SCI IMAGING KODAK FI