INFRARED REFLECTANCE AND ABSORPTION OF N-TYPE INP

被引：36

作者：

KIM, OK

BONNER, WA

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 05期

关键词：

D O I：

10.1007/BF02655296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：827 / 836

页数：10

共 17 条

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[7] INGAAS-INP P-I-N PHOTO-DIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU-M WAVELENGTH
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[9] OPTICAL PROPERTIES OF N-TYPE INP
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 178 - 180

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