N+-P-P+ STRUCTURE INP SOLAR-CELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：9

作者：

SUGO, M

YAMAMOTO, A

YAMAGUCHI, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期

关键词：

D O I：

10.1109/T-ED.1987.22995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：772 / 777

页数：6

共 13 条

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[2] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
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[3] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP
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[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 247 - 249
[4] QUANTUM EFFICIENCY AND RADIATIVE LIFETIME OF BAND-TO-BAND RECOMBINATION IN HEAVILY DOPED N-TYPE GAAS
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[J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1355 - &
[5] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
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[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3731 - &
[6] Itoh Y., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P475
[7] ITOH Y, 1984, 1ST INT PHOT SCI ENG, P245
[8] RADIATION-DAMAGE IN INP SINGLE-CRYSTALS AND SOLAR-CELLS
YAMAGUCHI, M
UEMURA, C
YAMAMOTO, A
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1429 - 1436
[9] ELECTRON-IRRADIATION DAMAGE IN RADIATION-RESISTANT INP SOLAR-CELLS
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UEMURA, C
YAMAMOTO, A
SHIBUKAWA, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (03): : 302 - 307
[10] YAMAGUCHI M, IN PRESS 2ND TECH DI

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