DEFECT LEVELS AND MINORITY-CARRIER DIFFUSION LENGTH IN 1-MEV ELECTRON-IRRADIATED N-INP

被引：5

作者：

ANDO, K

YAMAGUCHI, M

UEMURA, C

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 10期

关键词：

D O I：

10.1143/JJAP.23.1406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1406 / 1407

页数：2

共 7 条

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[5] DEFECT STATES IN ELECTRON BOMBARDED N-INP [J].

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[7] ELECTRON-IRRADIATION INDUCED DEEP LEVELS IN P-INP [J].

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