IMPURITY (SI) CONCENTRATION EFFECTS ON RADIATION-INDUCED DEEP TRAPS IN N-INP

被引：10

作者：

ANDO, K

YAMAGUCHI, M

UEMURA, C

机构：

来源：

关键词：

D O I：

10.1063/1.333017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4444 / 4446

页数：3

共 10 条

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[9] ELECTRON-IRRADIATION INDUCED DEEP LEVELS IN P-INP
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[10] CARRIER CONCENTRATION EFFECTS ON RADIATION-DAMAGE IN INP
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ANDO, K
UEMURA, C
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3160 - 3162