ELECTRON-PARAMAGNETIC RESONANCE IDENTIFICATION OF THE PHOSPHORUS ANTISITE IN ELECTRON-IRRADIATED INP

被引:74
作者
KENNEDY, TA
WILSEY, ND
机构
关键词
D O I
10.1063/1.94654
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1089 / 1091
页数:3
相关论文
共 17 条
  • [1] BRUDNYI VN, 1982, SOV PHYS SEMICOND+, V16, P1211
  • [2] DEAN PJ, UNPUB J CRYS GROWTH
  • [3] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES
    GOSWAMI, NK
    NEWMAN, RC
    WHITEHOUSE, JE
    [J]. SOLID STATE COMMUNICATIONS, 1981, 40 (04) : 473 - 477
  • [4] ESR DETECTION OF ANTISITE LATTICE-DEFECTS IN GAP, CDSIP2, AND ZNGEP2
    KAUFMANN, U
    SCHNEIDER, J
    RAUBER, A
    [J]. APPLIED PHYSICS LETTERS, 1976, 29 (05) : 312 - 313
  • [5] ELECTRONIC SPIN OF THE GA VACANCY IN GAP
    KENNEDY, TA
    WILSEY, ND
    KREBS, JJ
    STAUSS, GH
    [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (17) : 1281 - 1284
  • [6] KENNEDY TA, 1979, DEFECTS RAD EFFECTS, P375
  • [7] KENNEDY TA, 1981, DEFECTS RAD EFFECTS, P257
  • [8] ODMR INVESTIGATION OF THE PGA ANTISITE DEFECT IN GAP
    KILLORAN, N
    CAVENETT, BC
    GODLEWSKI, M
    KENNEDY, TA
    WILSEY, ND
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (22): : L723 - L728
  • [9] PHOTO-EPR EXPERIMENTS ON DEFECTS IN IRRADIATED SILICON
    LEE, YH
    BILASH, TD
    CORBETT, JW
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 7 - 12
  • [10] Leloup J., 1975, Lattice Defects in Semiconductors, 1974, P367