SPATIAL DISORDER DEPENDENCE OF THE CONDUCTANCE OF A RANDOM RESISTOR NETWORK

被引：4

作者：

EGEAGUILLEN, A

ORTUNO, M

GARCIAMOLINA, R

机构：

[1] Departamento de Física, Universidad de Murcia, E-30080 Murcia

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.50.12520

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the resistance of one-, two-, and three-dimensional localized systems in the hopping regime, simulated by random-resistor networks within the r-resistor model. The analysis of the logarithm of the resistance as a function of the degree of spatial disorder reveals that in one- and two-dimensional samples the resistance increases with disorder, while in three-dimensional samples the resistance decreases. We also study the fluctuations of the conductance from sample to sample. © 1994 The American Physical Society.

引用

页码：12520 / 12523

页数：4

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