Two-dimensional states at the HgTe/Hg0.05Cd0.95Te interface as determined from the tunneling investigations

被引：7

作者：

Germanenko, AV ^{[1
]}

Minkov, GM ^{[1
]}

Larionova, VA ^{[1
]}

Rut, OE ^{[1
]}

Becker, CR ^{[1
]}

Landwehr, G ^{[1
]}

机构：

[1] UNIV WURZBURG,INST PHYS,D-97074 WURZBURG,GERMANY

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.52.17254

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of tunneling investigations performed on HgTe/Hg0.05Cd0.95Te heterostructures grown by molecular-beam epitaxy are presented. Oscillations in the conductivity due to tunneling are observed as a function of magnetic field and bias voltage. It is shown that these oscillations are related to changes in the barrier transparency, which occur as a result of oscillations of the density of two-dimensional electron states. They are localized in a quantum well in HgTe near the HgTe/Hg0.05Cd0.95Te interface. The experimental dependences of the population of electron bands on the applied bias are compared with the results of numerical calculations carried out on the basis of a three-band Kane model of the energy spectrum. It is shown that two of the three occupied two-dimensional bands, which reveal themselves in our oscillation curves, are two subbands of the lowest electron band which is split by the strong spin-orbit interaction, and the third is one of the split-off subbands of the excited band.

引用

页码：17254 / 17259

页数：6

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