VALENCE BAND AND CORE LINES INVESTIGATION ON THE GE-AU SYSTEM BY PHOTO-ELECTRON SPECTROSCOPY WITH SYNCHROTRON RADIATION

被引：15

作者：

PERFETTI, P ^{[1
]}

KATNANI, AD ^{[1
]}

ZHAO, TX ^{[1
]}

MARGARITONDO, G ^{[1
]}

BISI, O ^{[1
]}

CALANDRA, C ^{[1
]}

机构：

[1] UNIV MODENA,IST FIS,I-41100 MODENA,ITALY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：628 / 631

页数：4

共 9 条

[1] BISI O, J PHYS C
[2] BISI O, UNPUB
[3] PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE
BRAICOVICH, L
GARNER, CM
SKEATH, PR
SU, CY
CHYE, PW
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5131 - 5141
[4] FORMATION, STRUCTURE, AND ORIENTATION OF GOLD SILICIDE ON GOLD SURFACES
GREEN, AK
BAUER, E
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1284 - 1291
[5] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
[6] HO PS, 1980, P S THIN FILM INTERF
[7] EPITAXY OF NOBLE-METALS AND (111) SURFACE SUPERSTRUCTURES OF SILICON AND GERMANIUM .1. STUDY AT ROOM-TEMPERATURE
LELAY, G
QUENTEL, G
FAURIE, JP
MASSON, A
[J]. THIN SOLID FILMS, 1976, 35 (03) : 273 - 287
[8] GE-AU INTERFACE FORMATION VS SI-AU INTERFACE FORMATION - ARE THEY DIFFERENT PROCESSES
PERFETTI, P
KATNANI, AD
DANIELS, RR
ZHAO, TX
MARGARITONDO, G
[J]. SOLID STATE COMMUNICATIONS, 1982, 41 (03) : 213 - 215
[9] PERFETTI P, UNPUB