USE OF LASERS TO SIMULATE RADIATION-INDUCED TRANSIENTS IN SEMICONDUCTOR DEVICES AND CIRCUITS

被引：114

作者：

HABING, DH

机构：

来源：

关键词：

D O I：

10.1109/TNS.1965.4323904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：91 / +

页数：1

共 10 条

[1]

CALDWELL RS, 1963, COMMUNICATION ELECTR

[2]

FAN HY, 1956, INFRARED ABSORPTION

[3]

HANNAY NB, 1960, SEMICONDUCTORS

[4]

JORDAN AG, 1960, IRE T ELECTRON DEV, VED6, P242

[5] INFRARED ABSORPTION OF SILICON NEAR THE LATTICE EDGE [J].

MACFARLANE, GG ;

ROBERTS, V .

PHYSICAL REVIEW, 1955, 98 (06) :1865-1866

[6]

MOSS TS, 1961, OPTICAL PROPERTIES S

[7]

SCHROEN W, 1964, RADCTDR64153 TECHN D

[8]

SHIVE JN, 1959, SEMICONDUCTOR DEVICE

[9]

SUBASHIEV VK, 1964, SOV PHYS-SOL STATE, V6, P1017

[10] TRANSIENT RESPONSE OF TRANSISTORS + DIODES TO IONIZING RADIATION [J].

WIRTH, JL ;

ROGERS, SC .