LINESHAPE OF THE SI-H STRETCHING VIBRATION FOR THE IDEALLY H-TERMINATED SI(111)1 BY 1

被引：8

作者：

DUMAS, P ^{[1
]}

CHABAL, YJ ^{[1
]}

HIGASHI, GS ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1990年 / 54卷

关键词：

D O I：

10.1016/0368-2048(90)80202-L

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The ideally H-terminated Si(111) surface, prepared by wet chemical etching, is characterized by a sharp Si-H stretching vibration at 2083.7 cm-1 (at 300K) polarized perpendicular to the surface. The temperature dependence of its wavenumber (center frequency), width and intensity can be accounted for by a weak anharmonic coupling to a silicon surface phonon (centered at 210 cm-1) and suggests a strong anharmonic coupling to the SiH bending mode (at 637 cm-1). In this paper, the procedures followed and limitations associated with this interpretation are addressed.

引用

页码：103 / 108

页数：6

共 21 条

[1]

BARKER AS, 1975, REV MOD PHYS, V47, pS2

[2]

BECKER RS, 1990, PHYS REV LETT, V65, pR40

[3] INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].