MODULATION VOLTAGE OF HIGH T(C) DC SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE WITH DAMPING RESISTANCE

被引:13
作者
ENPUKU, K
DOI, H
TOKITA, G
MARUO, T
机构
[1] Department of Electronics, Kyushu University 36, Fukuoka
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 5B期
关键词
DC SQUID; HIGH T(C) SUPERCONDUCTOR; DAMPING RESISTANCE; V-PHI RELATION; MODULATION VOLTAGE;
D O I
10.1143/JJAP.33.L722
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of damping resistance on the voltage versus flux (V-PHI) relation of the high T(c) dc superconducting quantum interference device (SQUID) is studied experimentally. Dc SQUID using YBaCuO step-edge junction and damping resistance in parallel with SQUID inductance is fabricated. Measured values of modulation voltage in the V-PHI relation are compared with those of the conventional SQUID without damping resistance. It is shown that modulation voltage is much improved by using damping resistance. The obtained experimental results agree reasonably with theoretical predictions reported previously.
引用
收藏
页码:L722 / L725
页数:4
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