IMPROVED PROCESS FOR HIGH-T(C) SUPERCONDUCTING STEP-EDGE JUNCTIONS

被引：61

作者：

SUN, JZ

GALLAGHER, WJ

CALLEGARI, AC

FOGLIETTI, V

KOCH, RH

机构：

[1] IBM T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.110749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a process for the fabrication of YBaCuO high-T(c) junctions based on the step-edge weak-link concept. The process emphasizes the creation of sharp and straight step edges on a substrate, and the restoration of oxygen content for superconducting materials at the step edges. A diamond-like carbon film is used as an ion milling mask for the creation of steps on substrates such as LaAlO3 and SrTiO3. Room-temperature plasma oxidation is shown to be effective in restoring T(c) from processing related degradation for grains residing at the step edge. Using this process, dc SQUIDs were fabricated with 77 K electrical performances matching, and in certain cases exceeding, similar SQUIDs made using bicrystal-based tilt-boundary weak-link junctions.

引用

页码：1561 / 1563

页数：3

共 12 条

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