LIQUID-PHASE EPITAXIAL-GROWTH OF GA-1-XAL-XAS ON SIDE AND TOP SURFACES OF AIR-EXPOSED GA-1-YAL-YAS

被引：10

作者：

TSUKADA, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 12期

关键词：

D O I：

10.1063/1.88640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：697 / 699

页数：3

相关论文

共 4 条

[1] GAAS-GAALAS DISTRIBUTED-FEEDBACK DIODE LASERS WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT
AIKI, K
NAKAMURA, M
UMEDA, J
YARIV, A
KATZIR, A
YEN, HW
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 145 - 146
[2] ROOM-TEMPERATURE OPERATION OF LOW-THRESHOLD SEPARATE-CONFINEMENT HETEROSTRUCTURE INJECTION LASER WITH DISTRIBUTED FEEDBACK
CASEY, HC
SOMEKH, S
ILEGEMS, M
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 142 - 144
[3] PREPARATION OF MULTILAYER LPE HETEROSTRUCTURES WITH CRYSTALLINE SOLID SOLUTIONS OF ALXGA1-XAS - HETEROSTRUCTURE LASERS
PANISH, MB
SUMSKI, S
HAYASHI, I
[J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 795 - &
[4] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS
TSUKADA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4899 - 4906