LASER ANNEALING OF DEFECTS IN CDTE EPITAXIAL LAYERS

被引：13

作者：

AS, DJ

PALMETSHOFER, L

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(85)90152-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：246 / 251

页数：6

相关论文

共 20 条

[1] OHMIC CONTACTS TO P-TYPE CDTE BY PULSED LASER-HEATING
AN, C
TEWS, H
COHENSOLAL, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 289 - 292
[2] ARNONE C, 1984, SPRINGER SERIES CHEM, V39, P379
[3] BERTOLOTTI M, 1982, CURRENT TOPICS MATER, V8, P95
[4] ORIENTATION DEPENDENT SURFACE DAMAGE OBSERVED IN LASER IRRADIATED CADMIUM TELLURIDE
BLAMIRES, NG
TOTTERDELL, DHJ
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1983, 16 (12) : 2361 - &
[5] ELECTRICAL-PROPERTIES OF CDTE FILMS GROWN BY HOT WALL EPITAXY
HUBER, W
LOPEZOTERO, A
[J]. THIN SOLID FILMS, 1979, 58 (01) : 21 - 27
[6] DEEP LEVELS IN N-CDTE
ISETT, LC
RAYCHAUDHURI, PK
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3605 - 3612
[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[8] LANG DV, 1979, THERMALLY STIMULATED, P93
[9] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE
LAX, M
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 786 - 788
[10] TEMPERATURE RISE INDUCED BY A LASER-BEAM
LAX, M
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3919 - 3924