DISLOCATION ENERGIES AND HARDNESS OF SEMICONDUCTORS

被引：43

作者：

SHER, A

CHEN, AB

SPICER, WE

机构：

[1] AUBURN UNIV,AUBURN,AL 36849

[2] STANFORD UNIV,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1063/1.95849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTOR MATERIALS

引用

页码：54 / 56

页数：3

共 15 条

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WILLOUGHBY, AFW
BROWN, M
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[5] GROYUNOVA NA, 1968, SEMICONDUCTORS SEMIM, V4, pCH1
[6] THEORY OF THE 2-CENTER BOND
HARRISON, WA
[J]. PHYSICAL REVIEW B, 1983, 27 (06) : 3592 - 3604
[7] HARRISON WA, 1983, MICROSCIENCE, V4, P34
[8] HIRTH JP, 1982, THEORY DISLOCATIONS, P262
[9] GROWTH OF DISLOCATION-FREE GAAS CRYSTALS BY NITROGEN DOPING
JACOB, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 669 - 671
[10] JAMES TW, 1983, INFRARED IMAGING SYS