DEFECT GENERATION DURING PLASMA TREATMENT OF SEMICONDUCTORS

被引:48
作者
WEBER, J
机构
[1] Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80
来源
PHYSICA B | 1991年 / 170卷 / 1-4期
关键词
D O I
10.1016/0921-4526(91)90124-W
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Defect generation during various dry etching processes is studied and the important parameters for the formation of point defects are discussed. The role of intrinsic defects and the fast diffusion of defects during the plasma treatment is considered. Special emphasis is devoted to the influence of hydrogen on the defect generation in plasma etching techniques. The evidence for optical recombination at hydrogen stabilized platelets in Si, as reported previously in the literature, is critically reviewed.
引用
收藏
页码:201 / 217
页数:17
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