A NEW APPROACH TO PHOTO-VOLTAIC JUNCTION FORMATION BY USING PULSE IMPLANTATION DOPING TECHNIQUE

被引：9

作者：

PIEKOSZEWSKI, J ^{[1
]}

GRYZINSKI, M ^{[1
]}

LANGNER, J ^{[1
]}

WERNER, Z ^{[1
]}

HUTH, GC ^{[1
]}

机构：

[1] UNIV SO CALIF,SCH MED,MARINA DEL REY,CA 90291

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / 09期

关键词：

D O I：

10.1051/jphys:019820043090135300

中图分类号：

学科分类号：

摘要：

引用

页码：1353 / 1358

页数：6

共 11 条

[1]

BELL AE, 1979, RCA REV, V40, P295

[2]

GRYZINSKI M, 1969, NUKLEONIKA, V14, P14

[3]

GRYZINSKI M, 1976, NUKLEONIKA, V21, P1225

[4]

GRYZINSKI M, 1979, 7TH P INT C PLASM PH, V3, P225

[5]

Muller J. C., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P711

[6]

PIEKOSZEWSKI J, 1981, PHYS STATUS SOLIDI, V2, P67

[7]

SKLADNIKSADOWSK.E, UNPUB J PHYSIQUE

[8]

Smithels C. I., 1976, METALS REFERENCE BOO

[9] NONTHERMAL PULSED LASER ANNEALING OF SI - PLASMA ANNEALING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW .

PHYSICS LETTERS A, 1979, 74 (06) :422-426

[10] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION [J].

WILLIAMS, JS ;

BROWN, WL ;

LEAMY, HJ ;

POATE, JM ;

RODGERS, JW ;

ROUSSEAU, D ;

ROZGONYI, GA ;

SHELNUTT, JA ;

SHENG, TT .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :542-544

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