HIGH-POWER ANTIGUIDED LASER ARRAY FABRICATED USING A SUPERLATTICE STRUCTURE

被引:1
作者
GRAY, JM [1 ]
MARSH, JH [1 ]
ROBERTS, JS [1 ]
机构
[1] UNIV SHEFFIELD,DEPT ELECT ENGN & ELECTR,SHEFFIELD S1 3JDF,S YORKSHIRE,ENGLAND
关键词
SEMICONDUCTOR LASER ARRAYS; SEMICONDUCTOR SUPERLATTICES;
D O I
10.1049/el:19941408
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The operation of antiguided array lasers is dependent on the creation of an effective refractive index step between the antiguide core and the interelement regions. The authors describe a novel technique, using zinc diffusion to disorder a superlattice, for creating the necessary index step in a 10 element antiguided laser array operating at 0.860 mu m. Output powers approach 400mW per facet into a 3 degrees (FWHM) beam. Use of this fabrication technique removes the need for overgrowth.
引用
收藏
页码:2040 / 2041
页数:2
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