ANTIGUIDED LASER ARRAY STRUCTURE AT 1.48-MU-M FABRICATED WITHOUT OVERGROWTH

被引：4

作者：

LAUGHTON, FR

MARSH, JH

BUTTON, C

机构：

[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND

[2] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 04期

关键词：

SEMICONDUCTOR LASERS; OPTICAL WAVE-GUIDES;

D O I：

10.1049/el:19940204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors describe the fabrication of five-element antiguided laser arrays at 1.48 mum using a novel material design which removes the need for overgrowth. Adding undoped passive waveguiding layers to the standard laser design significantly alters the shape of the far field emission from the lasers, showing that the array elements are pulled in phase with each other.

引用

页码：303 / 304

页数：2

共 4 条

[1] PHASE-LOCKED ARRAYS OF ANTIGUIDES - MODAL CONTENT AND DISCRIMINATION [J].