PROPOSAL OF A GAINAS/GAINASP/INP ANTIGUIDED FILTER LASER ARRAY OPERATING IN SINGLE LONGITUDINAL MODE

被引：2

作者：

IKEDA, T

DONG, J

ARAI, S

HOTTA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 08期

关键词：

D O I：

10.1109/68.238242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a new type of in-phase lateral- and single-longitudinal-mode laser array, the so-called antiguided filter laser array (AFLA), in which an antiguided filter region is inserted between a positive-index-guided multiple-stripe array region with a shallow corrugation grating and a high-reflectivity region with deep corrugation. Threshold current as low as 100 mA was obtained for a five-element laser array with active region length of 300 mum and total emitter width of 18 mum by using five-pairs of Ga0.3In0.7As (3 nm) / GaInAsP (10 nm) compressively strained quantum wells.

引用

页码：882 / 885

页数：4

共 7 条

[1] 1.5 MU-M GAINASP/INP DISTRIBUTED REFLECTOR (DR) LASERS WITH SCH STRUCTURE [J].