STUDY OF ELECTRON-BEAM EFFECTS ON TRIMETHYLSILANE COVERED SI(100)

被引：14

作者：

ASCHERL, MV

CAMPBELL, JH

LOZANO, J

CRAIG, JH

机构：

[1] Department of Physics, University of Texas at El Paso, El Paso

[2] Dept. of Chemistry and Biochemistry, Arizona State University, Tempe, AZ 85287-1604

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 06期

关键词：

D O I：

10.1116/1.579474

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electron-stimulated desorption (ESD) and temperature programmed desorption (TPD) studies were conducted on trimethylsilane dosed Si(100) surfaces. Experiments investigating the effects of electron-beam irradiation on TPD spectra and ESD kinetic energy distributions of hydrogen from trimethylsilane covered Si(100) surfaces are reported. Electron-beam irradiation strongly influences subsequent TPD spectra. Electron-beam induced dissociation of physisorbed particles on the surface is demonstrated. It is concluded that electron irradiation of trimethylsilane covered Si(100) selectively enhances or induces specific hydrogen adsorbed states when physisorbed species are present on the surface. (C) 1995 American Vacuum Society.

引用

页码：2721 / 2725

页数：5

共 16 条

[1] ADAPTIVE TEMPERATURE PROGRAM ALE OF SI1-XGEX/SI HETEROSTRUCTURES FROM SI2H6/GE2H6 [J].