PERMANENT DAMAGE INTRODUCED BY SINGLE PARTICLES INCIDENT ON SILICON DEVICES

被引：17

作者：

SROUR, JR ^{[1
]}

SHANFIELD, Z ^{[1
]}

HARTMANN, RA ^{[1
]}

OTHMER, S ^{[1
]}

NEWBERRY, DM ^{[1
]}

机构：

[1] CONTROL DATA CORP,BLOOMINGTON,MN 55420

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4526 / 4532

页数：7

共 18 条

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[10]

MEYER PL, 1965, INTRO PROBABILITY ST, P77

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