THEORY OF GERMANIUM-RELATED DEFECTS IN VITREOUS SILICON DIOXIDE .1. GERMANIUM ATOM IN SILICON SITE

被引：6

作者：

DIANOV, EM

SOKOLOV, VO

SULIMOV, VB

机构：

[1] Institute of General Physics, Academy of Sciences of the Ussr

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 162卷 / 01期

关键词：

D O I：

10.1002/pssb.2221620114

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A germanium substitutional impurity (Ge atom in a silicon vacancy) in vitreous silicon dioxide is investigated by a quantum chemical MNDO method in a cluster approach taking into account the relaxation of the nearest atomic environment of the defect.

引用

页码：173 / 181

页数：9

共 19 条

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