SCALING THEORY FOR DOUBLE-GATE SOI MOSFETS

被引：427

作者：

SUZUKI, K

TANAKA, T

TOSAKA, Y

HORIE, H

ARIMOTO, Y

机构：

[1] Fujitsu Laboratories Ltd., Atsugi, 243-01

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 12期

关键词：

D O I：

10.1109/16.249482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We established a scaling theory for double-gate SOI MOSFET's, which gives a guidance for the device design (silicon thickness t(si); gate oxide thickness t(ox)) so that maintaining a subthreshold factor for a given gate length L(G). According to our theory, a device can be designed with a gate length of less than O.l mu m while maintaining the ideal subthreshold factor, which is verified numerically with a two-dimensional device simulator.

引用

页码：2326 / 2329

页数：4

共 14 条

[1] DOUBLE-GATE SILICON-ON-INSULATOR TRANSISTOR WITH VOLUME INVERSION - A NEW DEVICE WITH GREATLY ENHANCED PERFORMANCE [J].