IMPACT OF THE VERTICAL SOI DELTA STRUCTURE ON PLANAR DEVICE TECHNOLOGY

A fully depleted lean channel transistor (DELTA) with its gate incorporated into a new vertical ultra-thin SOI structure is presented. In the deep-submicrometer region, selective oxidation produces and isolates an ultra-thin SOI MOSFET that has high crystalline quality, as good as that of conventional bulk single-crystal devices. Experiments and three-dimensional simulations have shown that this new gate structure has effective channel control, and that the vertical ultra-thin SOI structure provides superior device characteristics: reduction in short-channel effects, minimized subthreshold swing, and high transconductance.