EFFECT OF BAND TAILS ON STIMULATED EMISSION OF LIGHT IN SEMICONDUCTORS

[1] JUNCTION POTENTIAL STUDIES IN TUNNEL DIODES [J]. PHYSICAL REVIEW, 1963, 131 (02): : 627 - &

[2] BONCHBRUEVICH VL, 1963, SOVIET PHYS SOLID ST, V5, P2890

[3] BONCHBRUEVICH VL, 1964, FIZ TVERD TELA, V5, P2117

[4] P-N JUNCTION LASERS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +

[5] DINGLE RB, 1955, PHILOS MAG, V46, P831

[6] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 174 - &

[7] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &

[8] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2155 - &

[9] EMELYANE.OV, 1965, FIZ TVERD TELA+, V7, P1063

[10] EMELYANENKO OV, 1965, FIZ TVERD TELA, V7, P1315

[1] JUNCTION POTENTIAL STUDIES IN TUNNEL DIODES [J]. PHYSICAL REVIEW, 1963, 131 (02): : 627 - &

[2] BONCHBRUEVICH VL, 1963, SOVIET PHYS SOLID ST, V5, P2890

[3] BONCHBRUEVICH VL, 1964, FIZ TVERD TELA, V5, P2117

[4] P-N JUNCTION LASERS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +

[5] DINGLE RB, 1955, PHILOS MAG, V46, P831

[6] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 174 - &

[7] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &

[8] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2155 - &

[9] EMELYANE.OV, 1965, FIZ TVERD TELA+, V7, P1063

[10] EMELYANENKO OV, 1965, FIZ TVERD TELA, V7, P1315