EPITAXIAL REGROWTH OF RUBY ON SAPPHIRE FOR AN INTEGRATED THIN-FILM STRESS SENSOR

被引：30

作者：

WEN, Q ^{[1
]}

CLARKE, DR ^{[1
]}

YU, N ^{[1
]}

NASTASI, M ^{[1
]}

机构：

[1] LOS ALAMOS NATL LAB,DIV MAT SCI & TECHNOL,LOS ALAMOS,NM 87545

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 03期

关键词：

D O I：

10.1063/1.113522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of thin film ruby by the epitaxial growth of Cr-doped amorphous alumina on sapphire is described. The incorporation of Cr onto the Al cation sites has been found by ion channeling measurements. It is also confirmed by the observation of the R1 and R2 luminescence lines characteristic of ruby. The frequency of the R lines shift linearly with applied stress and the piezo-spectroscopic coefficient is the same as for bulk ruby. © 1995 American Institute of Physics.

引用

页码：293 / 295

页数：3

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