EPITAXIAL-GROWTH OF FE-DOPED SAPPHIRE THIN-FILMS FROM AMORPHOUS AL OXIDE LAYERS DEPOSITED ON SAPPHIRE SUBSTRATES

被引：10

作者：

YU, N

NASTASI, M

机构：

[1] Materials Division, Los Alamos National Laboratory, Los Alamos

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.112665

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of amorphous Al2O3, about 280 nm thick, with Fe-cation concentrations of 0-4 at. % were deposited onto alpha-alumina [0001] substrates. Epitaxial regrowth of the thin films was found to occur during a postannealing process at temperatures of 950 and 1400-degrees-C. The regrowth quality was determined by Rutherford backscattering spectrometry and ion channeling measurements. Perfect regrowth was found in the undoped samples after annealing at 1400-degrees-C with a minimum backscattering yield of 2% in the Al sublattice. Furthermore, ion channeling angular scans revealed that Fe dopants occupied the substitutional sites of Al sublattice upon thermal anneal. This simple method of incorporating dopants into single-crystal alumina has potential in the fabrications of thin-film planar optical waveguides.

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页码：180 / 182

页数：3

相关论文

共 11 条

[1] TRANSITIONS IN VAPOR-DEPOSITED ALUMINA FROM 300 DEGREES TO 1200 DEGREES C [J].

DRAGOO, AL ;

DIAMOND, JJ .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1967, 50 (11) :568-&

[2] THERMAL ANNEALING OF FE IMPLANTED AL2O3 IN AN OXIDIZING AND REDUCING ENVIRONMENT [J].

FARLOW, GC ;

WHITE, CW ;

MCHARGUE, CJ ;

SKLAD, PS ;

APPLETON, BR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :541-546

[3]

MCCALLUM JC, IN PRESS NUCL INSTRU

[4] MICROSTRUCTURAL AND CHEMICAL EFFECTS IN AL2O3 IMPLANTED WITH IRON AT 77-K AND ANNEALED IN OXIDIZING OR REDUCING ATMOSPHERES [J].

MCHARGUE, CJ ;

SKLAD, PS ;

WHITE, CW ;

MCCALLUM, JC ;

PEREZ, A ;

MAREST, G .

JOURNAL OF MATERIALS RESEARCH, 1991, 6 (10) :2160-2177

[5] ION-IMPLANTATION AND THERMAL ANNEALING OF ALPHA-AL2O3 SINGLE-CRYSTALS [J].

NARAMOTO, H ;

WHITE, CW ;

WILLIAMS, JM ;

MCHARGUE, CJ ;

HOLLAND, OW ;

ABRAHAM, MM ;

APPLETON, BR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :683-698

[6] THE EFFECT OF POSTIMPLANTATION ANNEALING ON THE MICROSTRUCTURE OF AL2O3 IMPLANTED WITH IRON AT - 185-DEGREES-C [J].

SKLAD, PS ;

ROMANA, L ;

MCHARGUE, CJ ;

WHITE, CW ;

MCCALLUM, JC .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 (pt 2) :1187-1194

[7] AMORPHIZATION OF AL2O3 BY ION-INDUCED DENSITY REDUCTION [J].

SPECHT, ED ;

WALKO, DA ;

ZINKLE, SJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 84 (03) :323-330

[8]

THORNTON JA, 1977, CERAM B, V56, P504

[9] PHOTOLUMINESCENCE CHARACTERIZATION OF ER-IMPLANTED AL2O3 FILMS [J].

VANDENHOVEN, GN ;

SNOEKS, E ;

POLMAN, A ;

VANUFFELEN, JWM ;

OEI, YS ;

SMIT, MK .

APPLIED PHYSICS LETTERS, 1993, 62 (24) :3065-3067

[10] FORMATION OF AMORPHOUS LAYERS IN AL2O3 BY ION-IMPLANTATION [J].

WHITE, CW ;

FARLOW, GC ;

MCHARGUE, CJ ;

SKLAD, PS ;

ANGELINI, MP ;

APPLETON, BR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :473-478