PHOTOLUMINESCENCE CHARACTERIZATION OF ER-IMPLANTED AL2O3 FILMS

被引：169

作者：

VANDENHOVEN, GN ^{[1
]}

SNOEKS, E ^{[1
]}

POLMAN, A ^{[1
]}

VANUFFELEN, JWM ^{[1
]}

OEI, YS ^{[1
]}

SMIT, MK ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,DEPT ELECT ENGN,TELECOMMUN & REMOTE SENSING TECHNOL LAB,2628 CD DELFT,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al2O3 films on oxidized Si substrates were implanted with 800 keV Er ions to peak concentrations ranging from 0.01 to 1 at. %. The samples show relatively broad photoluminescence spectra centered at lambda = 1.533 mum, corresponding to intra-4f transitions in Er3+. At an Er peak concentration of 0.23 at. %, post-implantation thermal annealing up to 950-degrees-C increases the photoluminescence intensity by a factor 40. This is a result of defect annealing, which increases the luminescence lifetime from 1 to 7 ms, as well as an increase in the Er3+ active fraction. High Er concentrations are achieved with only moderate concentration quenching effects.

引用

页码：3065 / 3067

页数：3

共 13 条

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