SILICON WHISKER GROWTH BY VAPOUR-LIQUID-SOLID PROCESS

[1] ELLIS WC, 1965, J APPL PHYS, V36, P2296

[2] VAPOR PHASE PREPARATION OF GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (06) : 548 - 551

[3] HOLONYAK N, 1961, AIME C METALLURGY EL, V12, P81

[4] SILICON WHISKER GROWTH AND EPITAXY BY VAPOUR-LIQUID-SOLID MECHANISM [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1965, 16 (08): : 1089 - &

[5] GROWTH PIPS AND WHISKERS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) : 2525 - +

[6] HIGH RESOLUTION SCANNING ELECTRON MICROSCOPY [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1965, 42 (02): : 81 - &

[7] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (05) : 89 - &

[8] WAGNER RS, 1965, T METALL SOC AIME, V233, P1053

[9] STUDY OF FILAMENTARY GROWTH OF SILICON CRYSTALS FROM VAPOR [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2993 - +

[1] ELLIS WC, 1965, J APPL PHYS, V36, P2296

[2] VAPOR PHASE PREPARATION OF GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (06) : 548 - 551

[3] HOLONYAK N, 1961, AIME C METALLURGY EL, V12, P81

[4] SILICON WHISKER GROWTH AND EPITAXY BY VAPOUR-LIQUID-SOLID MECHANISM [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1965, 16 (08): : 1089 - &

[5] GROWTH PIPS AND WHISKERS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) : 2525 - +

[6] HIGH RESOLUTION SCANNING ELECTRON MICROSCOPY [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1965, 42 (02): : 81 - &

[7] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (05) : 89 - &

[8] WAGNER RS, 1965, T METALL SOC AIME, V233, P1053

[9] STUDY OF FILAMENTARY GROWTH OF SILICON CRYSTALS FROM VAPOR [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2993 - +