HIGH REPETITION RATE OPERATION OF BISTABLE LASER-DIODES

被引：9

作者：

ODAGAWA, T

MACHIDA, T

SANADA, T

NAKAI, K

WAKAO, K

YAMAKOSHI, S

机构：

[1] Fujitsu Lab Ltd, Atsugi

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1991年 / 138卷 / 02期

关键词：

LASERS; DIODES;

D O I：

10.1049/ip-j.1991.0013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We obtained a bistable laser diode with a saturable absorber operating at a high repetition rate. The laser was made with a semi-insulating layer, which realised low carrier density in the reset region and low parasitic capacitance (3 pF over 300-mu-m). Low carrier density in the reset region where there is high differential gain (loss) reduces the carrier density changes caused by electrical reset and optical set signals. These enable flip-flop operation at a 2.5 Gb/s repetition rate.

引用

页码：75 / 78

页数：4