COHERENT PRECIPITATE FORMATION IN TL IMPLANTED SI

被引：1

作者：

APPLETON, BR ^{[1
]}

NARAYAN, J ^{[1
]}

WHITE, CW ^{[1
]}

WILLIAMS, JS ^{[1
]}

SHORT, KT ^{[1
]}

机构：

[1] ROYAL MELBOURNE INST TECHNOL,MELBOURNE,VIC 3000,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

All Open Access; Green;

D O I：

10.1016/0167-5087(83)90806-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Semiconducting silicon

引用

页码：239 / 242

页数：4

共 13 条

[1]

APPLETON BR, 1979, LASER SOLID INTERACT, P291

[2]

APPLETON BR, UNPUB

[3]

APPLETON BR, 1982, LASER ELECTRON BEAM

[4]

BACKMAN KJ, 1979, CURRENT TOPICS MATER, V3

[5]

BOLTAKS NI, 1963, DIFFUSION SEMICONDUC

[6]

DORNEIJ B, 1970, RAD EFFECTS, V6, P155

[7] INFLUENCE OF N-TYPE DOPANTS ON LATTICE LOCATION OF IMPLANTED P-TYPE DOPANTS IN SI AND GE [J].

ERIKSSON, L ;

FLADDA, G ;

BJORKQVIST, K .

APPLIED PHYSICS LETTERS, 1969, 14 (06) :195-+

[8]

ERIKSSON L, 1969, J APPL PHYS, V40, P843

[9]

ERIKSSON L, 1969, RADIAT EFF, V1, P71

[10]

Fladda G., 1969, Radiation Effects, V1, P249, DOI 10.1080/00337576908235567

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