TEMPERATURE-DEPENDENCE OF RELATIVE INTEGRATED-INTENSITIES OF SYMMETRY-ALLOWED PHONON-ASSISTED EXCITON EMISSION IN SI AND GE

被引：20

作者：

SMITH, DL ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.14.2448

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2448 / 2455

页数：8

共 26 条

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