HIGH-FREQUENCY PERFORMANCE OF MOVPE NPN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：7

作者：

ENQUIST, PM ^{[1
]}

HUTCHBY, JA ^{[1
]}

CHANG, MF ^{[1
]}

ASBECK, PM ^{[1
]}

SHENG, NH ^{[1
]}

HIGGINS, JA ^{[1
]}

机构：

[1] ROCKWELL INT CORP,SCI CTR,THOUSAND OAKS,CA 91360

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 17期

关键词：

D O I：

10.1049/el:19890755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1124 / 1125

页数：2

共 4 条

[1] HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].

ASBECK, PM ;

CHANG, MF ;

WANG, KC ;

MILLER, DL ;

SULLIVAN, GJ ;

SHENG, NH ;

SOVERO, E ;

HIGGINS, JA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (12) :1462-1470

[2] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J].

CHANG, MCF ;

ASBECK, PM ;

WANG, KC ;

SULLIVAN, GJ ;

SHENG, NH ;

HIGGINS, JA ;

MILLER, DL .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) :303-305

[3]

ENGUIST PM, 1988, J CRYST GROWTH, V93, P637

[4] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

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