SPATIALLY CONFINED LASER-INDUCED DAMAGE OF SI UNDER A LIQUID LAYER

被引：43

作者：

SHAFEEV, GA ^{[1
]}

SIMAKHIN, AV ^{[1
]}

机构：

[1] ACAD SCI USSR,INST GEN PHYS,MOSCOW V-71,USSR

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 04期

关键词：

D O I：

10.1007/BF00324194

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental results are presented on the Si damage induced by a copper-vapor laser beam under a layer of chemically neutral liquid (H2O, DMFA, DMSO). The lateral dimensions of the damaged area coincide with those of laser beam, while the depth of the damaged area increases with time. The rate of hole formation may be is high as 75-mu-m/s. The qualitative interpretation of the results is given on the basis of laser generation of vacancies, and their combination and redistribution in the field of the inhomogeneous mechanical strains due to multiple heating/cooling cycles of the surface of the semiconductor.

引用

页码：311 / 316

页数：6

共 14 条

[1] [Anonymous], 1986, THEORY ELASTICITY, DOI [DOI 10.1016/C2009-0-25521-8, 10.1016/C2009-0-25521-8]
[2] [Anonymous], 1985, HDB OPTICAL CONSTANT
[3] BAUERLE D, 1986, SPRINGER SERIES MATE, V1
[4] BOYKO VI, 1985, IOFAN12 PREPR
[5] BROOK MR, 1991, APPL PHYS A-MATER, V52, P78
[6] Itoh N., 1987, Interfaces Under Laser Irradiation. Proceedings of the NATO Advanced Study Institute, P215
[7] KISS J, 1985, APPL PHYS A, V37, P252
[8] LASER-INDUCED CHEMICAL ETCHING OF SILICON IN CHLORINE ATMOSPHERE .1. PULSED IRRADIATION
KULLMER, R
BAUERLE, D
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03): : 227 - 232
[9] LUKES J, 1988, 5TH P INT SCH QUANT
[10] LASER-INDUCED CHEMICAL ETCHING OF SILICON IN CHLORINE ATMOSPHERE .2. CONTINUOUS IRRADIATION
MOGYOROSI, P
PIGLMAYER, K
KULLMER, R
BAUERLE, D
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (04): : 293 - 299

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