ON DERIVATIVES OF SURFACE EXCESSES

被引:6
作者
BERZ, F
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10.1016/0022-3697(64)90097-6
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O6 [化学];
学科分类号
0703 ;
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页码:859 / &
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[2]  
BERZ F, 1959, J ELECTRON CONTR, V6, P197
[3]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[4]   HIGH-FREQUENCY RELAXATION PROCESSES IN THE FIELD-EFFECT EXPERIMENT [J].
GARRETT, CGB .
PHYSICAL REVIEW, 1957, 107 (02) :478-487
[5]  
JAHNKE E, 1943, TABLE FUNCTIONS
[6]   ANALYTIC EXPRESSIONS RELATING SURFACE CHARGE AND POTENTIAL PROFILES IN SPACE-CHARGE REGION IN SEMICONDUCTORS [J].
LEE, VJ ;
MASON, DR .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2660-&