ELECTRONIC-STRUCTURE OF OXYGEN VACANCIES IN TIO2

被引：15

作者：

MUNNIX, S

SCHMEITS, M

机构：

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 50卷 / 12期

关键词：

D O I：

10.1016/0038-1098(84)90294-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1087 / 1089

页数：3

共 19 条

[1] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895

[2] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899

[3] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].

BERNHOLC, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789

[4] SURFACE ELECTRONIC-STRUCTURE OF TIO2 - ATOMIC GEOMETRY, LIGAND COORDINATION, AND THE EFFECT OF ADSORBED HYDROGEN [J].

HENRICH, VE ;

KURTZ, RL .

PHYSICAL REVIEW B, 1981, 23 (12) :6280-6287

[5] ULTRAVIOLET PHOTOEMISSION-STUDIES OF MOLECULAR ADSORPTION ON OXIDE SURFACES [J].

HENRICH, VE .

PROGRESS IN SURFACE SCIENCE, 1979, 9 (5-6) :143-164

[6] THE NATURE OF TRANSITION-METAL-OXIDE SURFACES [J].

HENRICH, VE .

PROGRESS IN SURFACE SCIENCE, 1983, 14 (02) :175-199

[7]

JAROS M, 1980, ADV PHYS, V29, P409, DOI 10.1080/00018738000101396

[8] WAVE FUNCTIONS FOR IMPURITY LEVELS [J].

KOSTER, GF ;

SLATER, JC .

PHYSICAL REVIEW, 1954, 95 (05) :1167-1176

[9] COMPUTATION OF CRYSTAL GREENS-FUNCTIONS IN THE COMPLEX-ENERGY PLANE WITH THE USE OF THE ANALYTICAL TETRAHEDRON METHOD [J].

LAMBIN, P ;

VIGNERON, JP .

PHYSICAL REVIEW B, 1984, 29 (06) :3430-3437

[10]

Lannoo M., 1981, POINT DEFECTS SEMICO

← 1 2 →