CARRIER LIFETIME DETERMINATION THROUGH STRESS-ASSOCIATED CYCLOTRON RESONANCE

被引：3

作者：

OTSUKA, E

SHIMURA, M

ISHIDA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1967年 / 6卷 / 11期

关键词：

D O I：

10.1143/JJAP.6.1300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1300 / &

共 11 条

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[5] FREQUENCY-DEPENDENT LINEWIDTH OF CLASSICAL CYCLOTRON RESONANCE IN GERMANIUM [J].

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MURASE, K ;

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JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (11) :2432-&

[6] TEMPERATURE AND STRESS DEPENDENCE OF ELECTRON LIFETIME IN RHO-TYPE SEMICONDUCTORS BETWEEN 1.5 AND 4.2 DEGREES K [J].

OTSUKA, E ;

MURASE, K ;

OHYAMA, T .

PHYSICAL REVIEW LETTERS, 1966, 17 (19) :1007-&

[7] OBSERVATION OF RESOLVED QUANTUM LINES IN UNIAXIALLY STRESSED GERMANIUM [J].

OTSUKA, E ;

MURASE, K ;

FUJIYASU, H .

PHYSICS LETTERS, 1966, 21 (03) :284-&

[8]

OTSUKA E, 1966, J PHYS SOC JPN, VS 21, P327

[9]

OTSUKA K, 1966, J PHYS SOC JAPAN, V21, P1004

[10]

PELLIN RA, 1959, DUPONT TECH SERV REP

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