INTERFACIAL AND BREAKDOWN CHARACTERISTICS OF MOS DEVICES WITH RAPIDLY GROWN ULTRATHIN SIO2 GATE INSULATORS

被引：15

作者：

MOSLEHI, MM ^{[1
]}

SHATAS, SC ^{[1
]}

SARASWAT, KC ^{[1
]}

MEINDL, JD ^{[1
]}

机构：

[1] NANOSIL,SUNNYVALE,CA 94086

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/T-ED.1987.23098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1407 / 1410

页数：4

共 11 条

[1]

AKINWANDE A, 1986, G5024 STANF U TECH R

[2]

Chen I. C., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P660

[3]

GELPEY JC, 1986, MATERIALS RES SOC S, V52, P321

[4]

GRONET C, 1986, MAT RES SOC S P RTP, V52, P306

[5]

HODGE AM, 1986, MATER RES SOC S P, V52, P313

[6]

Moslehi M. M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P157

[7] THIN SIO2 INSULATORS GROWN BY RAPID THERMAL-OXIDATION OF SILICON [J].

MOSLEHI, MM ;

SHATAS, SC ;

SARASWAT, KC .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1353-1355

[8]

Nulman J., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P376

[9] RAPID THERMAL-PROCESSING OF THIN GATE DIELECTRICS - OXIDATION OF SILICON [J].

NULMAN, J ;

KRUSIUS, JP ;

GAT, A .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) :205-207

[10] OXIDATION OF SILICON USING LAMP LIGHT RADIATION [J].

SATO, Y ;

KIUCHI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) :652-654

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