TWO-DIMENSIONAL FINITE-ELEMENT CHARGE-SHEET MODEL OF A SHORT-CHANNEL MOS-TRANSISTOR

[1] BANK RE, 1979, PLTMG CNA152 U TEX C

[2] BRANDT A, 1977, MATH COMPUT, V31, P333, DOI 10.1090/S0025-5718-1977-0431719-X

[3] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 2 - 4

[4] CHARGE-SHEET MODEL OF MOSFET [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 345 - 355

[5] BUTURLA EM, 1974, INT C COMPUTAT METH

[6] THRESHOLD VOLTAGE FROM NUMERICAL SOLUTION OF 2-DIMENSIONAL MOS-TRANSISTOR [J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1973, CT20 (06): : 666 - 673

[7] EISENSTAT SC, 1976, 112 YAL U DEP COMP S

[8] FICHTNER W, 1980, P ELLIPTIC SOLVER C

[9] NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1520 - 1532

[10] NUMERICAL INVESTIGATION OF MESH SIZE CONVERGENCE RATE OF THE FINITE-ELEMENT METHOD IN MESFET SIMULATION [J]. SOLID-STATE ELECTRONICS, 1981, 24 (06) : 485 - 493

[1] BANK RE, 1979, PLTMG CNA152 U TEX C

[2] BRANDT A, 1977, MATH COMPUT, V31, P333, DOI 10.1090/S0025-5718-1977-0431719-X

[3] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 2 - 4

[4] CHARGE-SHEET MODEL OF MOSFET [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 345 - 355

[5] BUTURLA EM, 1974, INT C COMPUTAT METH

[6] THRESHOLD VOLTAGE FROM NUMERICAL SOLUTION OF 2-DIMENSIONAL MOS-TRANSISTOR [J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1973, CT20 (06): : 666 - 673

[7] EISENSTAT SC, 1976, 112 YAL U DEP COMP S

[8] FICHTNER W, 1980, P ELLIPTIC SOLVER C

[9] NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1520 - 1532

[10] NUMERICAL INVESTIGATION OF MESH SIZE CONVERGENCE RATE OF THE FINITE-ELEMENT METHOD IN MESFET SIMULATION [J]. SOLID-STATE ELECTRONICS, 1981, 24 (06) : 485 - 493