NUMERICAL INVESTIGATION OF MESH SIZE CONVERGENCE RATE OF THE FINITE-ELEMENT METHOD IN MESFET SIMULATION

被引:8
作者
LAUX, SE
LOMAX, RJ
机构
关键词
D O I
10.1016/0038-1101(81)90066-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:485 / 493
页数:9
相关论文
共 24 条
[1]  
BABUSKA I, 1972, MATH F FINITE ELEMEN
[2]  
BANK RE, 1978, S SPARSE MATRIX COMP, P62
[3]   FINITE-ELEMENT METHODS IN SEMICONDUCTOR-DEVICE SIMULATION [J].
BARNES, JJ ;
LOMAX, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) :1082-1089
[4]   MODELS FOR CONTACTS TO PLANAR DEVICES [J].
BERGER, HH .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&
[5]   RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS [J].
CROWELL, CR ;
BEGUWALA, M .
SOLID-STATE ELECTRONICS, 1971, 14 (11) :1149-&
[6]  
ENGLEMANN RWH, 1976, 1976 P INT EL DEV M, P351
[7]   DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J].
FUKUI, H .
BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03) :771-797
[8]  
JACKSON TN, 1979, 1979 P INT EL DEV M, P58
[9]  
JACKSON TN, 1980, THESIS U MICHIGAN AN
[10]  
Kondratiev V.A., 1967, T MOSCOW MATH SOC, V16, P227